AS5045B View Datasheet(PDF) - austriamicrosystems AG
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Description
Manufacturer
AS5045B Datasheet PDF : 33 Pages
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AS5045B
Datasheet - Electrical Characteristics
Table 3. Electrical Characteristics
Symbol
Parameter
IO
Output current
DC Characteristics CMOS Output: PWM
VOH
High level output voltage
VOL
Low level output voltage
IO
Output current
DC Characteristics CMOS Output: A, B, Index
VOH
High level output voltage
VOL
Low level output voltage
IO
Output current
DC Characteristics Tri-state CMOS Output: DO
VOH
High level output voltage
VOL
Low level output voltage
IO
Output current
IOZ
Tri-state leakage current
1. Either with 3.3V or 5V supply.
Condition
VDD5V: 4.5V
VDD5V: 3V
VDD5V: 4.5V
VDD5V: 3V
VDD5V: 4.5V
VDD5V: 3V
VDD5V: 4.5V
VDD5V: 3V
Min
Typ
Max
Unit
4
mA
2
VDD5V –
0.5
V
VSS
+0.4
V
4
mA
2
VDD5V –
0.5
V
VSS
+0.4
V
4
mA
2
VDD5V –
0.5
V
VSS
+0.4
V
4
mA
2
1
µA
6.1 Magnetic Input Specification
TAMB = -40 to +125°C, VDD5V = 3.0 to 3.6V (3V operation) VDD5V = 4.5 to 5.5V (5V operation) unless otherwise noted. Also valid for version I.
Two-pole cylindrical diametrically magnetized source:
Table 4. Magnetic Input Specification
Symbol
Parameter
Condition
Min
Typ
Max
Unit
dmag
Diameter
Recommended magnet: Ø 6mm x 2.5mm for
4
6
mm
tmag
Thickness
cylindrical magnets
2.5
mm
Required vertical component of the magnetic
Bpk
Magnetic input field amplitude
field strength on the die’s surface, measured
along a concentric circle with a radius of
45
1.1mm
75
mT
Boff
fmag_abs
Magnetic offset
Input frequency
(rotational speed of magnet)
Constant magnetic stray field
153 rpm @ 4096 positions/rev
± 10
mT
2.54
Hz
Max. offset between defined device center
Disp
Displacement radius
and magnet axis
(see Figure 17)
0.25
mm
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