HMC287MS8 View Datasheet(PDF) - Hittite Microwave

Part Name

Description

Manufacturer

HMC287MS8

GaAs MMIC LOW NOISE AMPLIFIER with AGC, 2.3 - 2.5 GHz

Hittite Microwave 

v02.0605

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

Control Voltage Range (Vctl)

RF Input Power (RFIN)(Vdd = +3 Vdc)

Channel Temperature

Continuous Pdiss (T = 85 °C)

(derate 5.62 mW/°C above 85 °C)

Thermal Resistance

(channel to lead)

Storage Temperature

Operating Temperature

+7 Vdc

-0.2V to Vdd

-7 dBm

150 °C

0.365 W

178 °C/W

-65 to +150 °C

-40 to +85 °C

Outline Drawing

HMC287MS8 / 287MS8E

GaAs MMIC LOW NOISE AMPLIFIER

with AGC, 2.3 - 2.5 GHz

4

Gain Control

Vctl (Vdc)

0.0

1.5

Vdd

Gain State

Maximum

Middle

Minimum

Typical

Ictl (uA)

25

25

25

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

NOTES:

1. LEADFRAME MATERIAL: COPPER ALLOY

2. DIMENSIONS ARE IN INCHES [MILLIMETERS]

3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.

Package Information

Part Number

Package Body Material

HMC287MS8

Low Stress Injection Molded Plastic

Lead Finish

Sn/Pb Solder

HMC287MS8E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn

[1] Max peak reflow temperature of 235 °C

[2] Max peak reflow temperature of 260 °C

[3] 4-Digit lot number XXXX

MSL Rating

MSL1 [1]

MSL1 [2]

Package Marking [3]

H287

XXXX

H287

XXXX

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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