MPSW51 View Datasheet(PDF) - Motorola => Freescale
Part Name
Description
Manufacturer
MPSW51 Datasheet PDF : 4 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSW51/D
One Watt High Current Transistors
PNP Silicon
COLLECTOR
3
2
BASE
MPSW51
MPSW51A*
*Motorola Preferred Device
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage MPSW51
VCEO
–30
Vdc
MPSW51A
–40
Collector – Base Voltage MPSW51
VCBO
–40
Vdc
MPSW51A
–50
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
–5.0
–1000
1.0
8.0
Vdc
mAdc
Watts
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
2.5
Watts
20
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
Thermal Resistance, Junction to Case
RqJC
50
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = –1.0 mAdc, IB = 0)
MPSW51
MPSW51A
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
MPSW51
MPSW51A
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
(VCB = –40 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
v v 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
MPSW51
MPSW51A
1
2
3
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
Symbol
Min
Max
Unit
V(BR)CEO
Vdc
–30
—
–40
—
V(BR)CBO
Vdc
–40
—
–50
—
V(BR)EBO –5.0
—
Vdc
ICBO
µAdc
—
–0.1
—
–0.1
IEBO
—
–0.1
µAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
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