Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2331
DESCRIPTION
·With TO-220 package
·Complement to type 2SA1008
·Low collector saturation voltage
·Fast switching speed
APPLICATIONS
·Switching regulators
·DC-DC converters
·High frequency power amplifiers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-220) and symbol
固IN电C半H导AN体GE SEMICONDUCTOR Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CONDITIONS
Open emitter
Open base
VALUE
100
100
UNIT
V
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
2.0
A
ICM
Collector current-Peak
4.0
A
IB
Base current
1.0
A
PT
Total power dissipation
Ta=25℃
TC=25℃
1.5
W
15
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃