2SC2331 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SC2331 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2331
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=1.0A ,IB=0.1A,L=1mH
100
V
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A
0.6
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=1A ;IB=0.1A
VCB=100V; IE=0
VEB=5V; IC=0
1.5
V
10
μA
10
μA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
40
hFE-2
DC current gain
IC=1A ; VCE=5V
40
200
Switching times resistive load
固IN电C半H导AN体GE SEMICONDUCTOR ton
Turn-on time
0.5
ts
Storage time
IC=1.0A IB1=- IB2=0.1A
RL=50Ω;VCC≈50V
1.5
tf
Fall time
0.5
hFE-2 Classifications
μs
μs
μs
M
L
K
40-80 60-120 100-200
2
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