MMSF3P03HD View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
MMSF3P03HD Datasheet PDF : 12 Pages
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MMSF3P03HD
Preferred Device
Power MOSFET
3 Amps, 30 Volts
P−Channel SO−8
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a very low reverse recovery time.
MiniMOSt devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc−dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives. The
avalanche energy is specified to eliminate the guesswork in designs
where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for SO−8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1.)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ TA = 25°C
Drain Current − Continuous @ TA = 100°C
Drain Current − Single Pulse (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C
(Note 2.)
VDSS
VDGR
VGS
ID
ID
IDM
PD
30
Vdc
30
Vdc
± 20 Vdc
4.6
Adc
3.0
50
Apk
2.5 Watts
Operating and Storage Temperature Range
− 55 to 150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 5.0 Vdc,
IL = 9.0 Apk, L = 14 mH, RG = 25 Ω)
Thermal Resistance − Junction to Ambient
(Note 2.)
EAS
RθJA
567
mJ
50 °C/W
Maximum Lead Temperature for Soldering
TL
Purposes, 1/8″ from case for 10 seconds
260
°C
1. Negative sign for P−Channel device omitted for clarity.
2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided),
10 sec. max.
http://onsemi.com
3 AMPERES
30 VOLTS
RDS(on) = 100 mW
P−Channel
D
G
S
MARKING
DIAGRAM
SO−8
8
CASE 751
STYLE 13
1
S3P03
LYWW
L
= Location Code
Y
= Year
WW = Work Week
PIN ASSIGNMENT
N−C
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
ORDERING INFORMATION
Device
Package
Shipping
MMSF3P03HDR2 SO−8 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
September, 2004 − Rev. XXX
Publication Order Number:
MMSF3P03HD/D
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