BUP 603D
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
220
W
180
Ptot
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 °C 160
TC
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
55
A
45
IC
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 °C 160
TC
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 3
A
IC 10 2
tp = 12.0µs
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IGBT
10 0
K/W
ZthJC
10 -1
10 1
10 0
10 -1
10 0
10 1
Semiconductor Group
100 µs
1 ms
10 ms
DC
10 2
V 10 3
VCE
4
10 -2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -3
10 -5
10 -4
10 -3
10 -2
10 -1
tp
s 10 0
Dec-02-1996