2SK3731 View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SK3731 Datasheet PDF : 3 Pages
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Power MOSFETs
2SK3731
N-channel enhancement mode MOSFET
■ Features
• Low on-resistance, low Qg
• High avalanche resistance
■ Applications
• For PDP
• For high-speed switching
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Drain-source surrender voltage
VDSS
230
V
Gate-source surrender voltage
VGSS
±30
V
Drain current
ID
20
A
Peak drain current
IDP
80
A
Avalanche energy capability *
EAS
668
mJ
Power dissipation
Channel temperature
Storage temperature
PD
50
W
Ta = 25°C
1.4
Tch
150
°C
Tstg −55 to +150 °C
Note) *: L = 2.79 mH, IL = 20 A, VDD = 50 V, 1 pulse, Ta = 25°C
10.5±0.3
Unit: mm
4.6±0.2
1.4±0.1
1.4±0.1
0.8±0.1
2.54±0.3
2.5±0.2
0 to 0.3
123
(10.2)
(8.9)
1: Gate
2: Drain
3: Source
TO-220C-G1 Package
Marking Symbol: K3731
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Drain-source surrender voltage
Gate threshold voltage
Drain-source cutoff current
Gate-source cutoff current
Drain-source ON resistance
Forward transfer admittance
Short-circuit forward transfer capacitance
(Common-source)
VDSS
Vth
IDSS
IGSS
RDS(on)
Yfs
Ciss
ID = 1 mA, VGS = 0
VDS = 10 V, ID = 1 mA
VDS = 184 V, VGS = 0
VGS = ±30 V, VDS = 0
VGS = 10 V, ID = 10 A
VDS = 10 V, ID = 10 A
VDS = 25 V, VGS = 0, f = 1 MHz
Short-circuit output capacitance
Coss
(Common-source)
Reverse transfer capacitance
Crss
(Common-source)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
Tr
td(off)
tf
VDD ≈ 100 V, ID = 10 A
RL = 10 Ω, VGS = 10 V
Min Typ Max Unit
230
V
2.0
4.0
V
10
µA
±1
µA
65 82 mΩ
7
14
S
2 360
pF
394
pF
49
pF
31
ns
27
ns
214
ns
47
ns
Publication date: March 2004
SJG00038AED
1
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