2SD1803 View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
2SD1803 Datasheet PDF : 5 Pages
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2SD1803
NPN SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
DC
IC
PULSE
ICM
5
A
8
Power Dissipation
Junction Temperature
Storage Temperature
TA=25°C
TC=25°C
PD
TJ
TSTG
1
W
20
+150
°C
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
C-E Saturation Voltage
B-E Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Turn-on Time
Storage Time
Fall Time
CLASSIFICATION OF hFE1
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(SAT)
VBE(SAT)
fT
Cob
tON
tS
tF
TEST CONDITIONS
IC=10μA, IE=0
IC=1mA, RBE=∞
IE=10μA, IC=0
VCB=40V, IE=0
VEB=4V, IC=0
VCE=2V, IC=0.5A
VCE=2V, IC=4A
IC=3A, IB=0.15A
IC=3A, IB=0.15A
VCE=5V, Ic=1A
VCB=10V, f=1MHz
See Test Circuit
See Test Circuit
See Test Circuit
MIN TYP MAX UNIT
60
V
50
V
6
V
1 μA
1 μA
70
400
35
220 400 mV
0.95 1.3 V
180
MHz
40
pF
50
ns
500
ns
20
ns
RANK
RANGE
Q
70 ~ 140
R
100 ~ 200
S
140 ~ 280
T
200 ~ 400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R209-014,E
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