Q67100-Q1098 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

Q67100-Q1098

4M × 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO)

Infineon Technologies 

HYB 5116(7)405BJ-50/-60

HYB 3116(7)405BJ/BT(L)-50/-60

4M × 4 EDO-DRAM

AC Characteristics (cont’d) 5, 6

TA = 0 to 70 °C, VCC = 5 V ± 10 % / VCC = 3.3 V ± 0.3 V, tT = 2 ns

Parameter

Symbol

Limit Values

Unit Note

-50

-60

min. max. min. max.

Hyper Page Mode (EDO) Cycle

Hyper page mode (EDO) cycle time

CAS precharge time

Access time from CAS precharge

Output data hold time

RAS pulse width in EDO mode

CAS precharge to RAS delay

OE setup time prior to CAS

tHPC

20

tCP

8

tCPA

–

tCOH

5

tRAS

50

tRHCP

27

tOES

5

Hyper Page Mode (EDO) Read-Modify-Write Cycle

Hyper page mode (EDO) read-write cycle tPRWC 58

time

CAS precharge to WE

tCPWD

41

CAS-before-RAS Refresh Cycle

CAS setup time

CAS hold time

RAS to CAS precharge time

Write to RAS precharge time

Write hold time referenced to RAS

tCSR

10

tCHR

10

tRPC

5

tWRP

10

tWRH

10

CAS-before-RAS Counter Test Cycle

CAS precharge time (CAS-before-RAS

counter test cycle)

tCPT

35

–

25

–

10

27 –

–

5

200k 60

–

32

–

5

–

68

–

49

–

10

–

10

–

5

–

10

–

10

–

40

–

ns

–

ns

32 ns 7

–

ns

200k ns

–

ns

–

ns

–

ns

–

ns

–

ns

–

ns

–

ns

–

ns

–

ns

–

ns

Self Refresh Cycle (L-Version only)

RAS pulse width

RAS precharge time

CAS hold time

tRASS

tRPS

tCHS

100k –

95 –

– 50 –

100k –

110 –

– 50 –

ns 17

ns 17

ns 17

Semiconductor Group

10

1998-10-01

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