Q67100-Q1098 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

Q67100-Q1098

4M × 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO)

Infineon Technologies 

HYB 5116(7)405BJ-50/-60

HYB 3116(7)405BJ/BT(L)-50/-60

4M × 4 EDO-DRAM

Capacitance

TA = 0 to 70 °C, f = 1 MHz

Parameter

Input capacitance (A0 to A11)

Input capacitance (RAS, CAS, WE, OE)

I/O capacitance (I/O1 to I/O4)

Symbol

CI1

CI2

CIO

Limit Values

min.

max.

–

5

–

7

–

7

Unit

pF

pF

pF

AC Characteristics 5, 6

TA = 0 to 70 °C, VCC = 5 V ± 10 % / VCC = 3.3 V ± 0.3 V, tT = 2 ns

Parameter

Symbol

Limit Values

Unit Note

-50

-60

min. max. min. max.

Common Parameters

Random read or write cycle time

RAS precharge time

RAS pulse width

CAS pulse width

Row address setup time

Row address hold time

Column address setup time

Column address hold time

RAS to CAS delay time

RAS to column address delay

RAS hold time

CAS hold time

CAS to RAS precharge time

Transition time (rise and fall)

Refresh period for 2k-refresh version

Refresh period for 4k-refresh version

Refresh period for Low Power Version

Read Cycle

Access time from RAS

Access time from CAS

tRC

84 –

104 –

ns

tRP

30 –

40 –

ns

tRAS

50 10k 60 10k ns

tCAS

8

10k 10 10k ns

tASR

0

–

0

–

ns

tRAH

8

–

10 –

ns

tASC

0

–

0

–

ns

tCAH

8

–

10 –

ns

tRCD

12 37 14 45 ns

tRAD

10 25 12 30 ns

tRSH

13 –

15 –

ns

tCSH

40 –

50 –

ns

tCRP

5

–

5

–

ns

tT

1

50 1

50 ns 7

tREF

–

32 –

32 ms

tREF

–

64 –

64 ms

tREF

–

128 –

128 ms

tRAC

–

50 –

60

ns 8, 9

tCAC

–

13 –

15

ns 8, 9

Semiconductor Group

8

1998-10-01

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