Q67100-Q1099 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

Q67100-Q1099

4M × 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO)

Infineon Technologies 

HYB 5116(7)405BJ-50/-60

HYB 3116(7)405BJ/BT(L)-50/-60

4M × 4 EDO-DRAM

AC Characteristics (cont’d) 5, 6

TA = 0 to 70 °C, VCC = 5 V ± 10 % / VCC = 3.3 V ± 0.3 V, tT = 2 ns

Parameter

Symbol

Limit Values

Unit Note

-50

-60

min. max. min. max.

Access time from column address

tAA

OE access time

tOEA

Column address to RAS lead time

tRAL

Read command setup time

tRCS

Read command hold time

tRCH

Read command hold time referenced to RAS tRRH

CAS to output in low-Z

tCLZ

Output buffer turn-off delay

tOFF

Output turn-off delay from OE

tOEZ

Data to CAS low delay

tDZC

Data to OE low delay

tDZO

CAS high to data delay

tCDD

OE high to data delay

tODD

–

25 –

30

ns 8, 10

–

13 –

15 ns

25 –

30 –

ns

0

–

0

–

ns

0

–

0

–

ns 11

0

–

0

–

ns 11

0

–

0

–

ns 8

0

13 0

15 ns 12

0

13 0

15 ns 12

0

–

0

–

ns 13

0

–

0

–

ns 13

10 –

13 –

ns 14

10 –

13 –

ns 14

Write Cycle

Write command hold time

Write command pulse width

Write command setup time

Write command to RAS lead time

Write command to CAS lead time

Data setup time

Data hold time

tWCH

8

–

10 –

ns

tWP

8

–

10 –

ns

tWCS

0

–

0

–

ns 15

tRWL

8

–

10 –

ns

tCWL

8

–

10 –

ns

tDS

0

–

0

–

ns 16

tDH

8

–

10 –

ns 16

Read-Modify-Write Cycle

Read-write cycle time

RAS to WE delay time

CAS to WE delay time

Column address to WE delay time

OE command hold time

tRWC

tRWD

tCWD

tAWD

tOEH

113 –

64 –

27 –

39 –

10 –

138 –

77 –

32 –

47 –

13 –

ns

ns 15

ns 15

ns 15

ns

Semiconductor Group

9

1998-10-01

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