EA20QC04 View Datasheet(PDF) - Nihon Inter Electronics

Part Name

Description

Manufacturer

EA20QC04

Schottky Barrier Diode

Nihon Inter Electronics 

SBD Type : EA20QC04

FEATURES

* TO-251AA Case

* Dual Diodes Cathode Common

* Low Forward Voltage drop

* Low Power Loss

* High Surge Capability

* 40 Volts thru 100 Volts Types Available

OUTLINE DRAWING

Maximum Ratings

Approx Net Weight:0.35g

Rating

Symbol

Repetitive Peak Reverse Voltage

VRRM

Non-repetitive Peak Reverse Voltage

VRSM

Average Rectified

Output Current

P.C.Board

mounted * IO

1.6

-

2

RMS Forward Current

IF(RMS)

Surge Forward Current

IFSM

20

Operating JunctionTemperature Range

Storage Temperature Range

Tjw

Tstg

EA20QC04

40

45

Ta=31°C

Tc=137°C

50Hz Full Sine Wave

Resistive Load

2.22

50Hz Full Sine Wave,1cycle,

Non-repetitive

- 40 to + 150

- 40 to + 150

Unit

V

V

A

A

A

°C

°C

Electrical • Thermal Characteristics

Characteristics

Peak Reverse Current

Peak Forward Voltage

Thermal

Junction to Ambient

Resistance

Junction to Case

* Print Land = 20x20 mm

Symbol

Conditions

IRM Tj=25°C,VRM=VRRM per Arm

VFM Tj=25°C,IFM= 1 A per Arm

Rth(j-a) P.C.Board mounted *

Rth(j-c)

-

Min Typ Max

- - 1.0

- - 0.55

- - 80

-- 6

Unit

mA

V

°C/W

°C/W

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