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Part Name
Description
BDV64 View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
Manufacturer
BDV64
PNP SILICON DARLINGTONS POWER TRANSISTORS
Comset Semiconductors
BDV64 Datasheet PDF : 4 Pages
1
2
3
4
BDV64-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
I
CEO
I
EBO
I
CBO
V
CEO
h
FE
V
CE(SAT)
V
BE
Collector Cutoff
Current
Emitter Cutoff Current
Collector Cutoff
Current
Collector-Emitter
Breakdown Voltage (*)
DC Current Gain (*)
Collector-Emitter
saturation Voltage (*)
Base-Emitter
Voltage(*)
V
CE
= -30 V, I
B
= 0
V
CE
= -40 V, I
B
= 0
V
CE
= -50 V, I
B
= 0
V
CE
= -60 V, I
B
= 0
V
BE
= -5 V, I
C
= 0
I
E
= 0
T
j
=25°C
I
E
= 0
T
j
=150°C
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
V
CB
= -120 V
V
CB
= -30 V
V
CB
= -40 V
V
CB
= -50 V
V
CB
= -60 V
I
C
= -30 mA, I
B
= 0
V
CE
= -4 V, I
C
= -5 A
I
C
= -5 A, I
B
= -20 mA
V
CE
= -4 V, I
C
= -5 A
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
(*) Pulse Width
≈
300
µ
s, Duty Cycle
∠
1.5 %
Min Typ Max Unit
-
-
-2 mA
-
-
-5 mA
-
- -0.4
mA
-
-
-2
-60 -
-80 -
-100 -
-120 -
-
-
V
-
1000 -
-
-
-
-
-2
V
-
- -2,5 V
26/09/2012
COMSET SEMICONDUCTORS
3/4
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