DF68541 View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

Manufacturer

DF68541

Fast Recovery Diode

Dynex Semiconductor 

Replaces March 1998 version, DS4303-1.3

APPLICATIONS

s Snubber Diode For GTO Applications

DF685

DF685

Fast Recovery Diode

DS4303-2.0 January 2000

KEY PARAMETERS

VRRM

IF(AV)

IFSM

Qr

trr

4500V

445A

4500A

650µC

5µs

FEATURES

s Double Side Cooling

s High Surge Capability

s Low Recovery Charge

VOLTAGE RATINGS

Type Number

Repetitive Peak

Reverse Voltage

V

RRM

V

DF685 45

DF685 44

DF685 43

DF685 42

DF685 41

DF685 40

4500

4400

4300

4200

4100

4000

Lower voltage grades available.

Conditions

V = V + 100V

RSM

RRM

CURRENT RATINGS

Outline type code: M779b.

See Package Details for further information.

Symbol

Parameter

Double Side Cooled

IF(AV)

I

F(RMS)

Mean forward current

RMS value

I

F

Continuous (direct) forward current

Single Side Cooled (Anode side)

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Conditions

Half wave resistive load, Tcase = 65oC

Tcase = 65oC

T = 65oC

case

Half wave resistive load, T = 65oC

case

Tcase = 65oC

T = 65oC

case

Max. Units

445

A

700

A

610

A

280

A

440

A

365

A

1/8

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