NTE317 View Datasheet(PDF) - NTE Electronics

Part Name

Description

Manufacturer

NTE317

Silicon NPN Transistor RF Power Output

NTE Electronics 

NTE317

Silicon NPN Transistor

RF Power Output

Description:

The NTE317 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communica-

tions. This device utilizes improved metallization systems to achieve extreme ruggedness under severe

operating conditions.

Features:

D 70W Minimum with Greater than 13.5dB Gain

D Withstands Severe Mismatch under Operating Conditions

D Emitter Ballasted

D Low Inductance Stripline Package

Absolute Maximum Ratings:

Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V

Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A

Total Device Dissipation (+25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220W

Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8°C/W

Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Electrical Characteristics:

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector–Emitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0, Note 1

Collector–Emitter Breakdown Voltage V(BR)CES IC = 20mA, VBE = 0, Note 1

Emitter–Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0

Collector Cut–Off Current

ICBO VCB = 15V, IE = 0

DC Current Gain

hFE VCE = 5V, IC = 5A

18 –

36 –

4–

––

10 –

–V

–V

–V

3 mA

–

Gain Bandwidth

Output Capacitance

Amplifier Power Out

Amplifier Power Gain

ft

VCE = 13.5V, IC = 100mA

Cob VCB = 12.5V, IC = 0,

–FO = 1.0MHz

PO 30MHz/12.5V

Pg

200 – – MHz

– 300 – pF

70 – – W

13.5 14.2 – dB

Note 1. Pulsed through 25mH Inductor

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