Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Part Name
Description
2SK4111 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK4111
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Toshiba
2SK4111 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SK4111
SAFE OPERATING AREA
100
ID max (PULSED)
*
ID max (CONTINUOUS)
*
10
100
μ
s
*
1 ms
*
DC OPERATION
Tc
=
25°C
1
0.1
※
SINGLE NONREPETITIVE PULSE
Tc=25
℃
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
0.01
TEMPERATURE
.
1
10
VDSS max
100
1000
DRAIN-SOURCE VOLTAGE V
DS
(V)
E
AS
– T
ch
500
400
300
200
100
0
25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
T
ch
(°C)
15 V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
TEST CIRCUIT
WAVE FORM
R
G
=
25
Ω
V
DD
=
90 V, L
=
6.36mH
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS
−
VDD
⎟⎟⎠⎞
5
2008-08-22
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]