BC859 View Datasheet(PDF) - KEC
Part Name
Description
Manufacturer
BC859 Datasheet PDF : 2 Pages
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SEMICONDUCTOR
TECHNICAL DATA
BC859/860
EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
·For Complementary with NPN Type BC849/850
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base
BC859
-30
VCBO
V
Q
Voltage
BC860
-50
Collector-Emitter
BC859
-30
VCEO
V
Voltage
BC860
-45
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-100
mA
Collector Power Dissipation
PC *
350
mW
Junction Temperature
Tj
150
℃
Storage Temperature Range
Tstg
-55～150 ℃
PC* : Package Mounted On 99.5% Alumina 10×8×0.6mm.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector-Emitter
Breakdown Voltage
BC859
BC860
V(BR)CEO IC=-10mA, IB=0
Collector-Base
Breakdown Voltage
BC859
BC860
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Base-Emitter Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V(BR)CBO
V(BR)EBO
ICBO
hFE
VBE(ON) 1
VBE(ON) 2
VCE(sat) 1
VCE(sat) 2
VBE(sat) 1
VBE(sat) 2
fT
Cob
Noise Figure
NF
Note : hFE Classification A:125～250, B:220～475
IC=-10μA, IE=0
IE=-10μA, IC=0
VCB=-30V, IE=0
IC=-2mA, VCE=-5V
IC=-2mA, VCE=-5V
IC=-10mA, VCE=-5V
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
IC=-10mA, VCE=-5V, f=100MHz
VCB=-10V, IE=0, f=1MHz
IC=-200μA, VCE=-5V
Rg=10kΩ, f=1kHz
Marking
MARK SPEC
TYPE
MARK
BC859A
4A
BC859B
4B
BC860A
4E
BC860B
4G
Type Name
E
L BL
2
3
1
P
P
M
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
MIN.
-30
-45
-30
-50
-5
-
125
-0.6
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-0.65
-
-0.075
-0.25
-0.7
-0.85
150
4.5
MAX.
-
-
-
-
-
-15
475
-0.75
-0.82
-0.3
-0.65
-
-
-
UNIT
V
V
V
nA
V
V
V
MHz
pF
-
-
4.0
dB
Lot No.
1998. 6. 15
Revision No : 2
1/2
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