MMBTA55 View Datasheet(PDF) - Galaxy Semi-Conductor
Part Name
Description
Manufacturer
MMBTA55 Datasheet PDF : 3 Pages
| |||
BL Galaxy Electrical
Production specification
PNP General Purpose Transistor
MMBTA55/A56
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Symbol Parameter
Test conditions
MIN. MAX.
Collector-base breakdown voltage
V(BR)CBO
MMBTA55 IC=-100μA,IE=0
-60
MMBTA56
-80
Collector-emitter breakdown voltage
V(BR)CEO
MMBTA55 IC=-10mA,IB=B 0
-80
MMBTA56
-80
UNIT
V
V
V(BR)EBO Emitter-base breakdown voltage
IE=-100μA,IC=0
-4
V
ICBO
collector cut-off current MMBTA55 IE = 0; VCB = -60V
MMBTA56 IE = 0; VCB = -80V
- -0.1 μA
ICEO
collector cut-off current MMBTA55 IB = 0; VCB = -60V
MMBTA56 IB=B 0; VCB = -80V
-
-0.1 μA
hFE
DC current gain
VCE = -1V;IC = -10mA
100
-
VCE = -1V;IC = -100mA
100
-
VCE(sat) collector-emitter saturation voltage
IC = -100mA; IBB = -10mA
-
-0.25 V
VBE(sat) base-emitter saturation voltage
fT
transition frequency
PACKAGE OUTLINE
Plastic surface mounted package
IC = -100mA; VCE = -1.0V -
IC = -100mA; VCE = -1V;
50
f = 100MHz
-1.2 V
- MHz
SOT-23
A
K
D
G
E
B
J
H
C
SOT-23
Dim
Min
Max
A
2.85
2.95
B
1.25
1.35
C
1.0Typical
D
0.37
0.43
E
0.35
0.48
G
1.85
1.95
H
0.02
0.1
J
0.1Typical
K
2.35
2.45
All Dimensions in mm
Document number: BL/SSSTC123
Rev.A
www.galaxycn.com
2
Share Link: 