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Part Name
Description
6R520E6 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
6R520E6
Metal Oxide Semiconductor Field Effect Transistor
Infineon Technologies
6R520E6 Datasheet PDF : 16 Pages
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600V CoolMOS
™
E6 Power Transistor
IPx60R520E6
Electrical characteristics
Table 7 Gate charge characteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
plateau
Min.
-
-
-
-
Table 8 Reverse diode characteristics
Parameter
Symbol
Diode forward voltage
V
SD
Min.
-
Reverse recovery time
t
rr
-
Reverse recovery charge
Q
rr
-
Peak reverse recovery current
I
rrm
-
Values
Typ.
2.8
12
23.4
5.4
Max.
-
-
-
-
Values
Typ.
0.9
Max.
-
260
-
2.5
-
18
-
Unit
nC
Note /
Test Condition
V
DD
=480 V,
I
D
=3.5A,
V
GS
=0 to 10 V
V
Unit
V
ns
µC
A
Note /
Test Condition
V
GS
=0 V,
I
F
=3.5A,
T
j
=25 °C
V
R
=400 V,
I
F
=3.5A,
d
i
F
/d
t
=100 A/µs
(see table 22)
Final Data Sheet
7
Rev. 2.0, 2010-04-09
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