JANTX2N3771 View Datasheet(PDF) - Microsemi Corporation
Part Name
Description
Manufacturer
JANTX2N3771 Datasheet PDF : 2 Pages
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TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/518
Devices
2N3771
2N3772
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
Operating & Storage Junction Temperature Range
1) Derate linearly 34.2 mW/0C for TA > +250C
2) Derate linearly 857 mW/0C for TC > +250C
Symbol
VCEO
VCBO
VEBO
IB
IC
PT
TJ, Tstg
2N3771 2N3772
40
60
50
100
7.0
7.0
7.5
5.0
30
20
6.0
150
-65 to +200
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 200 mAdc
2N3771
2N3772
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, RBE = 100 Ω
2N3771
2N3772
V(BR)CER
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, VBE = -1.5 Vdc
2N3771
2N3772
V(BR)CEX
Collector-Emitter Cutoff Current
VCE = 30 Vdc
2N3771
ICEO
VCE = 50 Vdc
Emitter-Base Cutoff Current
2N3772
VBE = 7.0 Vdc
2N3771
IEBO
2N3772
Collector-Emitter Cutoff Current
VBE = 1.5 Vdc, VCE = 50 Vdc
2N3771
ICEX
VBE = 1.5 Vdc, VCE = 100 Vdc
2N3772
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
TO-3*
(TO-204AA)
*See Appendix A for
Package Outline
Min. Max.
Unit
40
Vdc
60
45
Vdc
70
50
Vdc
90
5.0
mAdc
5.0
2.0
mAdc
500
µAdc
500
120101
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