C5200 View Datasheet(PDF) - Thinki Semiconductor Co., Ltd.
Part Name
Description
Manufacturer
C5200 Datasheet PDF : 2 Pages
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2SC5200
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=8A ;IB=0.8A
VBE
Base-emitter voltage
IC=7A ; VCE=5V
ICBO
Collector cut-off current
VCB=230V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=7A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=5V
COB
Collector output capacitance
hFE-1 classifications
R
O
55-100
80-160
f=1MHz;VCB=10V
®
MIN TYP. MAX UNIT
230
V
3.0
V
1.5
V
5
µA
5
µA
55
160
35
30
MHz
200
pF
Mechanical Dimensions
−B−
N
R
123
TO-3PL
Q
0.25 (0.010) M T B M
−T−
C
U
E
A
L
P
K
F 2 PL
W
G
J
D 3 PL
H
0.25 (0.010) M T B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
DIM MIN MAX
A 28.0 29.0
B 19.3 20.3
C
4.7
5.3
D 0.93 1.48
E
1.9
2.1
F
2.2
2.4
G
5.45 BSC
H
2.6
3.0
J
0.43 0.78
K 17.6 18.8
L
11.2 REF
N
4.35 REF
P
2.2
2.6
Q
3.1
3.5
R
2.25 REF
U
6.3 REF
W
2.8
3.2
STYLE 2:
PIN 1.
2.
3.
BASE
COLLECTOR
EMITTER
INCHES
MIN MAX
1.102 1.142
0.760 0.800
0.185 0.209
0.037 0.058
0.075 0.083
0.087 0.102
0.215 BSC
0.102 0.118
0.017 0.031
0.693 0.740
0.411 REF
0.172 REF
0.087 0.102
0.122 0.137
0.089 REF
0.248 REF
0.110 0.125
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
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