BSS138LT1(2004) View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

BSS138LT1
(Rev.:2004)

Power MOSFET 200 mA, 50 V

ON Semiconductor 

BSS138LT1

TYPICAL ELECTRICAL CHARACTERISTICS

10

9 VGS = 2.5 V

8

150°C

7

6

5

25°C

4

3

−55°C

2

1

0

0.05

0.1

0.15

0.2

0.25

ID, DRAIN CURRENT (AMPS)

Figure 6. On−Resistance versus Drain Current

6

5.5 VGS = 4.5 V

5

150°C

4.5

4

3.5

3

25°C

2.5

2

−55°C

1.5

1

0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5

ID, DRAIN CURRENT (AMPS)

Figure 8. On−Resistance versus Drain Current

8

VGS = 2.75 V

7

6

150°C

5

4

25°C

3

2

−55°C

1

0

0.05

0.1

0.15

0.2

0.25

ID, DRAIN CURRENT (AMPS)

Figure 7. On−Resistance versus Drain Current

4.5

VGS = 10 V

4

150°C

3.5

3

2.5

25°C

2

1.5

−55°C

1

0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5

ID, DRAIN CURRENT (AMPS)

Figure 9. On−Resistance versus Drain Current

1

120

100

0.1

TJ = 150°C 25°C

−55°C

80

60

Ciss

0.01

40

Coss

20

0.001

0

0.2

0.4

0.6

0.8

1.0

1.2

Crss

00

5

10

15

20

25

VSD, DIODE FORWARD VOLTAGE (VOLTS)

Figure 10. Body Diode Forward Voltage

Figure 11. Capacitance

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