BSS63 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BSS63 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP high-voltage transistor
Product specification
BSS63
FEATURES
• Low current (max. 100 mA)
• High voltage (max. 100 V).
APPLICATIONS
• High-voltage general purpose
• Switching applications.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP high-voltage transistor in a SOT23 plastic package.
NPN complement: BSS64.
MARKING
TYPE NUMBER
BSS63
MARKING CODE(1)
BM∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
handbook, halfpage
3
3
1
1
Top view
2
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−110
−100
−6
−100
−100
−100
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 15
2
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