BSS63 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BSS63 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP high-voltage transistor
Product specification
BSS63
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
VBEsat
Cc
fT
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
CONDITIONS
IE = 0; VCB = −90 V
IE = 0; VCB = −90 V; Tj = 150 °C
IC = 0; VEB = −6 V
IC = −10 mA; VCE = −1 V
IC = −25 mA; VCE = −1 V
IC = −25 mA; IB = −2.5 mA
IC = −25 mA; IB = −2.5 mA
IE = ie = 0; VCB = −10 V; f = 1 MHz
IC = −25 mA; VCE = −5 V;
f = 100 MHz
MIN. TYP. MAX. UNIT
−
−
−100 nA
−
−
−50 µA
−
−
−100 nA
30 −
−
30 −
−
−
−
−250 mV
−
−
−900 mV
−
3
−
pF
50 85 −
MHz
1999 Apr 15
3
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