BSS63 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

BSS63

PNP Silicon AF and Switching Transistors

Siemens AG 

BCX 42

BSS 63

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 10 mA

BCX 42

BSS 63

Collector-base breakdown voltage1)

IC = 100 µA

BCX 42

BSS 63

Emitter-base breakdown voltage, IE = 10 µA

Collector cutoff current

VCB = 80 V

VCB = 100 V

VCB = 80 V, TA = 150 ˚C

VCB = 100 V, TA = 150 ˚C

BSS 63

BCX 42

BSS 63

BCX 42

Collector cutoff current

VCE = 100 V

TA = 85 ˚C

TA = 125 ˚C

BCX 42

BCX 42

Emitter cutoff current, VEB = 4 V

DC current gain1)

IC = 100 µA, VCE = 1 V

IC = 10 mA, VCE = 5 V

IC = 20 mA, VCE = 5 V

IC = 100 mA, VCE = 1 V

IC = 200 mA, VCE = 1 V

BCX 42

BSS 63

BSS 63

BCX 42

BCX 42

Collector-emitter saturation voltage1)

IC = 300 mA, IB = 30 mA

BCX 42

IC = 25 mA, IB = 2.5 mA

BSS 63

IC = 75 mA, IB = 7.5 mA

BSS 63

Base-emitter saturation voltage1)

IC = 300 mA, IB = 30 mA

BCX 42

AC characteristics

Transition frequency

IC = 20 mA, VCE = 5 V, f = 20 MHz

Output capacitance

VCB = 10 V, f = 1 MHz

1) Pulse test: t ≤ 300 µs, D = 2 %

Symbol

Values

Unit

min. typ. max.

V(BR)CE0

125 –

100 –

V(BR)CB0

125 –

110 –

V(BR)EB0 5

–

ICB0

–

–

–

–

–

–

–

–

ICE0

–

–

–

–

IEB0

–

–

hFE

25

–

30

–

30

–

63

–

40

–

VCEsat

–

–

–

–

–

–

VBEsat

–

–

V

–

–

–

–

–

100 nA

100 nA

20

µA

20

µA

µA

10

75

100 nA

–

–

–

–

–

–

V

0.9

0.25

0.9

1.4

fT

–

Cobo

–

150 –

12 –

MHz

pF

Semiconductor Group

2

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