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UAA3522HL View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
UAA3522HL Datasheet PDF : 28 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
Philips Semiconductors
Low power dual-band GSM transceiver
with an image rejecting front-end
Objective specification
UAA3522HL
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
UNIT
IR
image rejection
fo(IF) = 200 MHz; note 1
30 35
dB
Goff
output isolation in
bit LNA = 0; notes 1 and 5
60 70
dB
off-state
Receiver IF section (AGC and baseband filter); the impedance of the source, input balun, matching network
and specified input is 50
IF INPUT TO AGC AMPLIFIER (PINS RXIIFA AND RXIIFB)
fi(IF)
Ri(dif)
IF input frequency
differential input
resistance
Pi(m)
input power matching note 1
BASEBAND INPUT/OUTPUT; RX MODE (PINS IA, IB, QA AND QB)
Gconv(dif)(min)
differential voltage
conversion gain per
channel; gain set to
minimum
notes 1 and 7
Gconv(dif)(max)
differential voltage
conversion gain per
channel; gain set to
maximum
Gconv(step)
voltage conversion step note 1
gain
GI-Q
gain difference
note 1
between I and Q paths
∆ϕ
quadrature-phase error
between I and Q paths
GL
gain control linearity note 1
notes 1 and 11
within any 20 dB gain range
F
noise figure
Gconv(dif)(max); notes 1 and 9
Gconv(dif)(min); notes 1 and 9
IP3
third-order intercept
Gconv(dif)(max) = 61 dB; note 8
point referenced to
input
CP1
1 dB compression
point referenced to
input
Gconv(dif)(min); note 8
CP1adjacent
1 dB compression
point for adjacent
channels referenced to
input
Gconv = 49 dB; notes 7 and 6
fmod = n × 200 kHz; n = 1, 2, 3
Bbf(-1dB)
1 dB baseband filter note 10
bandwidth
td(g)
group delay variation DC < fmod < 67.7 kHz
200
1
15 10
2.5 0.5 +1.5
59.5 61.5 63.5
2
0.8
5 +5
2 +2
3 +3
1 +1
9
61
42 38
4 0 −
45 40
67.7 − −
1.5
MHz
k
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dB
dBm
dBm
dBm
kHz
µS
2000 Feb 18
14

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