IXFH12N100F View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
Manufacturer
IXFH12N100F Datasheet PDF : 2 Pages
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Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
(TO-247)
Characteristic Values
Min. Typ.
Max.
8
12
S
2700
pF
305
pF
93
pF
12
ns
9.8
ns
31
ns
12
ns
77
nC
16
nC
42
nC
0.21
0.42 °C/W
°C/W
Source-Drain Diode
TJ = 25°C unless otherwise specified)
IS
VGS = 0V
ISM
Repetitive, pulse width limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IF = 12A, -di/dt = 100A/μs
QRM
VR = 100V, VGS = 0V
IRM
Characteristic Values
Min. Typ.
Max.
12 A
48 A
1.5 V
250 ns
0.8
μC
7.0
A
IXFH12N100F
IXFT12N100F
TO-247 (IXFH) Outline
∅P
e
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Note: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Min Recommended Footprint
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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