BU508A View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

BU508A

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

BU508A

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-base breakdown voltage

IE=10mA; IC=0

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0

VCE(sat) Collector-emitter saturation voltage IC=4.5A; IB=2A

VBE(sat) Base-emitter saturation voltage

ICES

Collector cut-off current

IEBO

Emitter cut-off current

IC=4.5A; IB=2A

VCE=1200V; VBE=0

TC=125°C

VEB=5V; IC=0

hFE

DC current gain

IC=1A ; VCE=5V

ts

Storage time

tf

Fall time

IC=4.5A ; VCC=140V

IB=1.8A; LC=0.9mH

LB=3µH

fT

Transition frequency

IC=0.1A ; VCE=5V

MIN TYP. MAX UNIT

10

V

700

V

1.0

V

1.3

V

1.0

2.0

mA

0.1

mA

8

7

µs

0.55

µs

7

MHz

2

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