FJA13009 View Datasheet(PDF) - Nell Semiconductor Co., Ltd

Part Name

Description

Manufacturer

FJA13009

Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 12A/400V/130W

Nell Semiconductor Co., Ltd 

SEMICONDUCTOR

FJA13009 RRooHHSS

Nell High Power Products

Silicon NPN triple diffusion planar transistor

(High voltage switching transistor)

12A/400V/130W

15.6±0.4

9.6

4.8±0.2

2.0±0.1

TO-3P(B)

FEATURES

High-speed switching

High collector to base voltage VCBO

Satisfactory linearity of foward current transfer ratio hFE

TO-3P package which can be installed to the heat sink

with one screw

APPLICATIONS

Switching regulator and general purpose

Ultrasonic generators

High frequency inverters

Φ3.2±0,1

2

3

+0.2

1.05 -0.1

5.45±0.1

5.45±0.1

BCE

0.65

+0.2

-0.1

1.4

12 3

B

All dimensions in millimeters

C

E NPN

ABSOLUTE MAXIMUM RATINGS (TC = 25°C)

SYMBOL

PARAMETER

VCBO

Collector to base voltage

VCEO

VEBO

Collector to emitter voltage

Emitter to base voltage

IC

Collector current (DC)

ICP

Maximum peak collector current (pulse)

IB

Base current

PC

Collector power dissipation

Tj

Junction temperature

Tstg

Storage temperature

THERMAL CHARACTERISTICS (TC = 25°C)

SYMBOL

PARAMETER

Rth(j-c)

Thermal resistance, junction to case

TC= 25°C

VALUE

700

400

7

12

24

6

130

150

-55 to 150

VALUE

1.55

UNIT

V

A

W

ºC

UNIT

ºC/W

www.nellsemi.com

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