2N3773 View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
Manufacturer
2N3773 Datasheet PDF : 2 Pages
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NPN 2N3773
HIGH POWER TRANSISTOR
The 2N3773 is silicon planar NPN transistor in Jedec TO-3 metal case.
They are intended for linear amplifiers and inductive switching applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCBO
VEBO
VCEX
IC
ICM
IB
IBM
Pt
TJ
TStg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Ratings
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
IB = 0
IE = 0
IC = 0
VBE = -1.5V
@ TC = 25°
Value
140
160
7
160
16
30
4
15
150
150
-65 to +200
Unit
V
V
V
V
A
A
A
A
W
°C
°C
Symbol
VCEO(SUS)
ICEO
Ratings
Collector-Emitter Sustaining
Voltage (*)
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
hFE
VCE(SAT)
VBE
IS/B
Emitter Cutoff Current
DC Current Gain (*)
Collector-Emitter saturation
Voltage (*)
Base-Emitter Voltage (*)
Second breakdown collector
current
Test Condition(s)
IC= 200 mA, IB = 0
VCE= 140 V, IB= 0
VCE= 140 V, VBE= -1.5V
VCE= 140 V, VBE= -1.5V
Tcase = 150°C
VEB= 7 V, IC= 0
IC= 8 A, VCE= 4 V
IC= 16 A, VCE= 4 V
IC= 8 A, IB= 800 mA
IC= 16 A, IB= 3.2 A
IC= 8 A, VCE= 4 V
VCE= 100 V, ts = 1s
(*) Pulse Duration = 300 µs, Duty Cycle <= 2%
Min Typ Max Unit
140 -
-
V
-
-
2 mA
-
-
2
mA
-
- 10
-
-
5 mA
15
5
-
-
60
-
-
-
-
-
-
1.4
4
V
-
- 2.2 V
1.5 -
-
A
21/09/2012
COMSET SEMICONDUCTORS
1/2
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