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2N6806 View Datasheet(PDF) - TE Connectivity

Part Name
Description
Manufacturer
2N6806 Datasheet PDF : 20 Pages
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The documentation and process conversion
measures necessary to comply with this revision shall
be completed by 30 October 1999
INCH-POUND
MIL-PRF-19500/562C
30 July 1999
SUPERSEDING
MIL-S-19500/562B
7 January 1994
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON
TYPES 2N6804 AND 2N6806
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor
intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated
device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figure 1, TO-204AA (formerly TO-3), figures 2 and 3 for JANHC and JANKC die dimensions.
1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
Type
2N6804
2N6806
PT 1/
TC = +25°C
W
75
75
PT
VDS
TA = +25°C
W
V dc
4
-100
4
-200
VDG
V dc
-100
-200
VGS
ID1 2/
TC = +25°C
V dc
A dc
± 20
-11.0
± 20
-6.5
ID2 2/
TC = +100°C
A dc
-7.0
-4.0
IS
A dc
-11.0
-6.5
IDM
A(pk)
-50
-28
TJ and TSTG
°C
-55 to +150
-55 to +150
1/ Derate linearly 0.6 W/°C for TC > +25°C:
PT
= TJ max TC
RΘJC
2/ I D =
TJ max TC
(RΘJC xRDS(on) atTJ max )
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961

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