2N6804 View Datasheet(PDF) - TE Connectivity

Part Name

Description

Manufacturer

2N6804

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON

TE Connectivity 

MIL-PRF-19500/562C

4.4.2.1 Group B inspection table VIa (JANS) of MIL-PRF-19500.

Subgroup

Method Conditions

3

1051

Test condition G.

4

1042

Test condition D; 2,000 cycles. The heating cycle shall be 1 minute minimum.

5

1042

Accelerated steady-state operation life; test condition A; VDS = rated TA = +175°C, t = 120 hours

Accelerated steady-state gate stress; condition B, VGS = rated, TA = +175°C, t = 24 hours.

End point delta measurements (see 4.5.3 herein)

5

2037

Bond strength (Al-Au die interconnects only); test condition A.

6

3161

See 4.5.2.

4.4.2.2 Group B inspection, table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500.

Subgroup

Method Condition

2

1051

Test condition G.

3

1042

Test condition D, 2,000 cycles. The heating cycle shall be 1 minute minimum.

End point delta measurements (see 4.5.3 herein)

3

2037

Test condition A. All internal bond wires for each device shall be pulled separately.

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in

table VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with subgroup 2 of table I

herein.

Subgroup

Method Condition

2

2036

Test condition A; weight = 10 pounds; t = 15 s.

6

1042

Test condition D, 6,000 cycles. The heating cycle shall be 1 minute minimum.

End point delta measurements (see 4.5.3 herein)

4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in

table IX of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with subgroup 2 of table I

herein.

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