DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

VNQ600AP-E View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
VNQ600AP-E
ST-Microelectronics
STMicroelectronics ST-Microelectronics
VNQ600AP-E Datasheet PDF : 26 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
VNQ600AP-E
Table 11. Truth table (continued)
Conditions
Input
L
Overvoltage
H
L
Short circuit to GND
H
H
L
Short circuit to VCC
H
Negative output voltage clamp
L
Electrical specifications
Output
L
L
L
L
L
H
H
L
Sense
0
0
0
(Tj<TTSD) 0
(Tj>TTSD) VSENSEH
0
< Nominal
0
Table 12. Electrical transient requirements (part 1/3)
ISO T/R 7637/1
test pulse
I
Test level
II
III
IV
1
-25 V
-50 V
-75 V
-100 V
2
+25 V
+50 V
+75 V
+100 V
3a
-25 V
-50 V
-100 V
-150 V
3b
+25 V
+50 V
+75 V
+100 V
4
-4 V
-5 V
-6 V
-7 V
5
+26.5 V
+46.5 V
+66.5 V
+86.5 V
Delays and impedance
2 ms, 10 Ω
0.2 ms, 10 Ω
0.1 µs, 50 Ω
0.1 µs, 50 Ω
100 ms, 0.01 Ω
400 ms, 2 Ω
Table 13. Electrical transient requirements (part 2/3)
ISO T/R 7637/1
test pulse
I
Test levels result
II
III
IV
1
C
C
C
C
2
C
C
C
C
3a
C
C
C
C
3b
C
C
C
C
4
C
C
C
C
5
C
E
E
E
Table 14. Electrical transient requirements (part 3/3)
Class
Contents
C
All functions of the device are performed as designed after exposure to
disturbance.
E
One or more functions of the device is not performed as designed after exposure
and cannot be returned to proper operation without replacing the device.
Doc ID 10873 Rev 3
11/26

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]