SB350 View Datasheet(PDF) - Diode Semiconductor Korea
Part Name
Description
Manufacturer
SB350 Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
SB320 --- SB370
FIG.1 -- FORWARD CURRENT DERATING CURVE
4.0
Resistive or
Inductive Load
0.375"(9.5mm)
3.0
Lead Length
2.0
SB320-SB340
SB350&SB370
1.0
0
0
25
50
75
100 125 150 175
AMBIENT TEMPERATURE,
FIG.3 --TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
10 TJ=125℃
Pulse width=300 s
1% Duty Cycle
TJ=25℃
1
0.1
0.01
SB320-SB340
SB350&SB370
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.5--TYPICAL JUNCTION CAPACITANCE
200
120
100
50
TJ=25
f=1MHz
20
10
.1 .2 .4
1.0 2 4
10 20 40
100
REVERSE VOLTAGE,VOLTS
FIG.2 --MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
80
70
60
50
40
30
20
10
1
TJ=TJMAX
8.3ms Single Half
Sine-Wave
10
100
NUMBER OF CYCLES AT 60Hz
FIG.4--TYPICAL REVERSE CHARACTERISTICS
100
TJ=125℃
10
TJ=75℃
1
0.01
TJ=25
0.001
0
SB320-SB340
SB350&SB370
20
40 60
80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.6--TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1
1
10
100
PULSE DURATION,Sec
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