KMZ10C View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
KMZ10C Datasheet PDF : 8 Pages
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Philips Semiconductors
Magnetic field sensor
Product specification
KMZ10C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
VALUE
180
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C; Hx = 3 kA/m; note 1; VCC = 5 V unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
Hy
magnetic field strength
−7.5
S
sensitivity
notes 1 and 2
1
TCVO
temperature coefficient of
output voltage
Rbridge bridge resistance
TCRbridge temperature coefficient of
bridge resistance
VCC = 5 V;
Tamb = −25 to +125 °C
ICC = 3 mA;
Tamb = −25 to +125 °C
Tbridge = −25 to +125 °C
Voffset
TCVoffset
offset voltage
temperature coefficient of
offset voltage
Tbridge = −25 to +125 °C
FL
linearity deviation of output Hy = 0 to ±3.75 kA/m
voltage
Hy = 0 to ±6.0 kA/m
Hy = 0 to ±7.5 kA/m
FH
hysteresis of output voltage
f
operating frequency
−
−
1
−
−1.5
−2
−
−
−
−
0
TYP.
−
−
−0.5
−0.15
−
0.35
−
−
−
−
−
−
−
MAX.
+7.5
2
−
UNIT
kA/m
-mk---A--V----⁄--⁄-m-V--
%/K
−
%/K
1.8
kΩ
−
%/K
+1.5
mV/V
+2
(µV/V)/K
0.8
%⋅FS
2.4
%⋅FS
2.7
%⋅FS
0.5
%⋅FS
1
MHz
Notes
1. In applications with Hx < 3 kA/m the sensor has to be reset before first operation by application of an auxiliary field
Hx = 3 kA/m.
2. S = -(---V----O------a----t---H-----y----=------6-----k---6A-----×-⁄--m--V----)C----C–------(--V-----O-----a----t---H-----y----=------0---)- .
1998 Mar 24
4
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