STP105N3LL View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP105N3LL

N-channel 30 V, 2.7 mΩ typ., 150 A, STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package

STMicroelectronics 

STP105N3LL

Electrical characteristics

Figure 8. Capacitance variations

Figure 9. Normalized gate threshold voltage vs

temperature

C

(pF)

5000

AM18161v1

VGS(th)

(norm)

1.2

ID=250µA

AM18162v1

4000

3000

2000

1

Ciss

0.8

0.6

0.4

1000

0

0

Coss

Crss

10

20

VDS(V)

0.2

0

-55

-5

45

95

120 TJ(°C)

Figure 10. Normalized on-resistance vs

temperature

Figure 11. Normalized V(BR)DSS vs temperature

RDS(on)

(norm)

2

ID=40A

VGS=10V

AM18163v1

V(BR)DSS

(norm)

1.08

1.06

ID=1mA

AM18164v1

1.04

1.5

1.02

1

1

0.98

0.5

0.96

0.94

0

-55

-5

45

95

120 TJ(°C)

0.92

-55

-5

45

95

145 TJ(°C)

Figure 12. Source-drain diode forward

characteristics

VSD (V)

AM18165v1

1

TJ=-55°C

0.9

TJ=25°C

0.8

0.7

TJ=175°C

0.6

0.5

0.4

0 10 20 30 40 50 60 70

ISD(A)

DocID023976 Rev 2

7/13

13

Share Link: