2SD2499 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SD2499 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IC=400mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
VBEsat Base-emitter saturation voltage
IC=4A; IB=0.8A
ICBO
Collector cut-off current
VCB=1500V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=4A ; VCE=5V
VF
Diode forward voltage
IF=6A
Cob
Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
fT
Transition frequency
IC=0.1A ; VCE=10V
Switching times :
ts
Storage time
tf
Fall time
ICP=4A;IB1=0.8A
fH =15.75kHz
Product Specification
2SD2499
MIN TYP. MAX UNIT
5
V
5
V
1.05 1.3
V
1
mA
67
200
mA
8
25
5
9
1.6
2.0
V
95
pF
2
MHz
7.5
11
μs
0.3
0.6
μs
2
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