ES3D View Datasheet(PDF) - LiteOn Technology
Part Name
Description
Manufacturer
ES3D Datasheet PDF : 3 Pages
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LITE-ON
SEMICONDUCTOR
SURFACE MOUNT
SUPER FAST RECTIFIERS
ES3A thru ES3J
REVERSE VOLTAGE - 50 to 400 Volts
FORWARD CURRENT - 3.0 Amperes
FEATURES
Glass passivated chip
Super fast switching for high efficiency
For surface mounted applications
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material has UL flammability classification 94V-0
B
MECHANICAL DATA
G
Case : Molded plastic
Polarity : Color band denotes cathode
H
Weight : 0.007 ounces, 0.21 grams
SMC
A
F
E
SMC
DIM. MIN. MAX.
A
6.60 7.11
C
B
5.59 6.22
C
2.92 3.18
D
0.15 0.31
E
7.75 8.13
F
0.05 0.20
G
2.01 2.50
D
H
0.76 1.52
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load
Peak Forward Surge Current
1ms single half sine-wave
@TL =110 C
@Tj=25℃
I 2t Rating for fusing (3ms≦ t ≦ 8.3ms)
SYMBOL
VRRM
VRMS
VDC
ES3A
50
35
50
I(AV)
IFSM
IFSM
I2t
ES3B
100
70
100
ES3C
150
105
150
ES3D
200
140
200
3.0
100
200
41.5
ES3G
400
280
400
ES3J
600
420
600
UNIT
V
V
V
A
A
A
A 2S
Maximum forward Voltage at 3.0A DC
VF
Maximum DC Reverse Current @TJ =25 ℃
at Rated DC Blocking Voltage @TJ=125 ℃
IR
Maximum Reverse Recovery Time (Note 1)
TRR
Typical Junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
Rθ JL
Rθ JA
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
NOTES : 1. Reverse Recovery Test Conditions :IF=0.5A,IR=1.0A,IRR=0.25A.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance junction to Lead and Ambient.
0.92
10
500
25
20 (Typ.)
45
10
50
-55 to + 150
-55 to + 150
1.25
1.30
V
uA
35
30 (Typ.)
ns
pF
15 C/W
C/W
℃
℃
REV. 6, Mar-2012, KSGC01
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