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Part Name
Description
2SJ483 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SJ483
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SJ483 Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
2SJ483
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
V
DSS
V
GSS
I
D
I
Note1
D(pulse)
I
DR
Pch
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. PW
≤
10
µ
s, duty cycle
≤
1 %
Ratings
Unit
–30
V
±
20
V
–5
A
–20
A
–5
A
0.9
W
150
°
C
–55 to +150
°
C
2
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