2SJ483 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SJ483 Datasheet PDF : 9 Pages
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Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Zero gate voltege drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Symbol
V(BR)DSS
V(BR)GSS
I DSS
I GSS
VGS(off)
RDS(on)
RDS(on)
Min
–30
±20
—
—
–1.0
—
—
Forward transfer admittance |yfs|
3
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance Crss
—
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Body to drain diode forward
VDF
—
voltage
Body to drain diode reverse
t rr
—
recovery time
Note: 1. Pulse test
Typ
—
—
—
—
—
0.08
0.12
5
630
390
135
15
70
65
60
–1.0
60
Max
—
—
–10
±10
–2.0
0.11
0.17
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
2SJ483
Test Conditions
ID = –10mA, VGS = 0
IG = ±100µA, VDS = 0
VDS = –30 V, VGS = 0
VGS = ±16V, VDS = 0
ID = –1mA, VDS = –10V
ID = –2.5A
VGS = –10V*1
ID = –2.5A
VGS = –4V*1
ID = –2.5A,
VDS = –10V*1
VDS = –10V
VGS = 0
f = 1MHz
VGS = –10V, ID = –2.5A
RL = 4Ω
ID = –5A, VGS = 0
IF = –5A, VGS = 0
diF/ dt = 20A/µs
3
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