MBRF10100CT View Datasheet(PDF) - Nell Semiconductor Co., Ltd
Part Name
Description
Manufacturer
MBRF10100CT
Nell Semiconductor Co., Ltd
MBRF10100CT Datasheet PDF : 5 Pages
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SEMICONDUCTOR
MBR10100CT Series RRooHHSS
BATINGS AND CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Nell Semiconductors
Fig.1 Forward current derating curve
10
Resistive or inductive Load
8
6
4
2
0
0
50
100
150
Case temperature (°C)
Fig.2 Maximum non-repetitive peak forward
surge current per diode
120
TJ = TJ max.
8.3 ms Single Half Sine-Wave
100
80
60
40
20
0
1
10
100
Number of cycles at 60 Hz
Fig.3 Typical instantaneous forward
characteristics per diode
100
TJ=150°C
10
TJ=175°C
1
TJ=100°C
TJ=25°C
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
lnstantaneous forward voltage (V)
Fig.4 Typical reverse characteristics
per diode
100
TJ=150°C
10
TJ=125°C
1
TJ=100°C
0.1
0.01
0.001
TJ=25°C
0.0001
0
20
40
60
80
100
Percent of rated peak reverse voltage (%)
Fig.5 Typical transient lmpedance
per diode
100
Junction to case
10
1
0.1
0.01
0.01
MBR,MBRH
----- MBRF
0.1
1
10
100
Pulse Duration, t (s)
Fig.6 Typical junction capacitance per diode
1000
100
10
1
0.1
1
10
100
Reverse voltage (V)
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