1N5822 View Datasheet(PDF) - Motorola => Freescale
Part Name
Description
Manufacturer
1N5822 Datasheet PDF : 6 Pages
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1N5820 1N5821 1N5822
*ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (2)
Characteristic
Symbol 1N5820 1N5821 1N5822
Unit
Maximum Instantaneous Forward Voltage (1)
(iF = 1.0 Amp)
(iF = 3.0 Amp)
(iF = 9.4 Amp)
VF
V
0.370
0.380
0.390
0.475
0.500
0.525
0.850
0.900
0.950
Maximum Instantaneous Reverse Current @ Rated dc Voltage (1)
TL = 25°C
TL = 100°C
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32″ from case.
* Indicates JEDEC Registered Data for 1N5820–22.
iR
mA
2.0
2.0
2.0
20
20
20
NOTE 1 — DETERMINING MAXIMUM RATINGS
Reverse power dissipation and the possibility of thermal runaway
must be considered when operating this rectifier at reverse voltages
above 0.1 VRWM. Proper derating may be accomplished by use of
equation (1).
* * TA(max) = TJ(max) RθJAPF(AV) RθJAPR(AV) (1)
where TA(max) = Maximum allowable ambient temperature
TJ(max) = Maximum allowable junction temperature
(125°C or the temperature at which thermal
runaway occurs, whichever is lowest)
PF(AV) = Average forward power dissipation
PR(AV) = Average reverse power dissipation
RθJA = Junction–to–ambient thermal resistance
Figures 1, 2, and 3 permit easier use of equation (1) by taking
reverse power dissipation and thermal runaway into consideration.
The figures solve for a reference temperature as determined by
equation (2).
* TR = TJ(max) RθJAPR(AV)
(2)
Substituting equation (2) into equation (1) yields:
* TA(max) = TR RθJAPF(AV)
(3)
Inspection of equations (2) and (3) reveals that TR is the ambient
temperature at which thermal runaway occurs or where TJ = 125°C,
when forward power is zero. The transition from one boundary condi-
tion to the other is evident on the curves of Figures 1, 2, and 3 as a
difference in the rate of change of the slope in the vicinity of 115°C.
The data of Figures 1, 2, and 3 is based upon dc conditions. For use
in common rectifier circuits, Table 1 indicates suggested factors for
an equivalent dc voltage to use for conservative design, that is:
VR(equiv) = V(FM) F
(4)
The factor F is derived by considering the properties of the various
rectifier circuits and the reverse characteristics of Schottky diodes.
EXAMPLE: Find TA(max) for 1N5821 operated in a 12–volt dc sup-
ply using a bridge circuit with capacitive filter such that IDC = 2.0 A
(IF(AV) = 1.0 A), I(FM)/I(AV) = 10, Input Voltage = 10 V(rms), RθJA =
40°C/W.
N Step 1. Find VR(equiv). Read F = 0.65 from Table 1,
VR(equiv) = (1.41) (10) (0.65) = 9.2 V.
Step 2. Find TR from Figure 2. Read TR = 108°C
@ VR = 9.2 V and RθJA = 40°C/W.
Step 3. Find PF(AV) from Figure 6. **Read PF(AV) = 0.85 W
+ + @
I(FM)
I(AV)
10 and IF(AV)
1.0 A.
* Step 4. Find TA(max) from equation (3).
TA(max) = 108 (0.85) (40) = 74°C.
**Values given are for the 1N5821. Power is slightly lower for the
1N5820 because of its lower forward voltage, and higher for the
1N5822. Variations will be similar for the MBR–prefix devices, using
PF(AV) from Figure 7.
Table 1. Values for Factor F
Circuit
Half Wave
Full Wave, Bridge
Load
Resistive Capacitive* Resistive Capacitive
Sine Wave
0.5
1.3
0.5
0.65
Square Wave
0.75
1.5
0.75
0.75
[ *Note that VR(PK) 2.0 Vin(PK). †Use line to center tap voltage for Vin.
Full Wave,
Center Tapped*†
Resistive Capacitive
1.0
1.3
1.5
1.5
2
Rectifier Device Data
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