2SC1875 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

2SC1875

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.6A

VBEsat

Base-emitter saturation voltage

IC=2.5A; IB=0.6A

ICES

Collector cut-off current

VCE=1500V; VBE=0

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

hFE-1

DC current gain

hFE-2

DC current gain

ts

Storage time

tf

Fall time

VCB=1000V; IE=0

VEB=5V; IC=0

IC=0.5A ; VCE=10V

IC=2A ; VCE=10V

IC=2.5A ; IB1=-IB2=0.6A

Pw=20µs

Product Specification

2SC1875

MIN TYP. MAX UNIT

500

V

10

V

1.2

V

1.0

mA

20

µA

20

µA

10

35

5

25

10

µs

1.0

µs

2

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