MJ15022 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
MJ15022 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJ15022 MJ15024
DESCRIPTION
·With TO-3 package
·Complement to type MJ15023; MJ15025
·Excellent safe operating area
·High DC current gain
hFE = 15 (Min) @ IC = 8 Adc
APPLICATIONS
·Designed for high power audio, disk head
positioners and other linear applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
MJ15022
MJ15024
VCEO
MJ15022
Collector-emitter voltage
MJ15024
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
IB
Base current
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
350
400
200
250
5
16
30
5
250
150
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
MAX
0.70
UNIT
℃/W
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