MBR16100 View Datasheet(PDF) - Diode Semiconductor Korea
Part Name
Description
Manufacturer
MBR16100 Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
MBR1630 - - - MBR16100
SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE: 30 - 100 V
CURRENT: 16 A
FEATURES
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling, and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
MECHANICAL DATA
Cas e:JEDEC TO-220AC,m olded plas tic body
Term inals :Leads, s olderable per MIL-STD-750,
1 1 Method 2026
Polarity: As m arked
Pos ition: Any
Weight: 0.069 ounces,1.96 gram
TO-220AC
10.2± 0.2
φ 3.8± 0.15
4.5± 0.2
1.4± 0.2
PIN
1
2
2.6± 0.2
0.9± 0.1
5.0± 0.1
0.5± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
Maximum average forw ard total device
m rectif ied current @TC = 125°C
Peak forw ard surge current 8.3ms single half
b sine-w ave superimposed on rated load
MBR
1630
MBR
1635
MBR
1640
MBR MBR
1645 1650
MBR
1660
MBR
1690
MBR
16100
UNITS
VRRM
30
35
40
45
50
60
90 100
V
V R MS
21
25
28
32
35
42
63
70
V
VDC
30
35
40
45
50
60
90 100
V
IF(AV)
16
A
IFSM
150
A
Maximum forw ard
(IF=16A,TC=25 )
v oltage
(Note 1)
VF
(IF=16A,TC=125 )
0.63
0.57
0.75
0.65
0.85
V
-
Maximum reverse current
@T =25
C
at rated DC blocking voltage @TC=125
Maximum thermal resistance (Note2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
IR
R θJC
TJ
TSTG
0.2
1.0
40
50
1.5
- 55 ---- + 150
- 55 ---- + 175
mA
/W
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