MBR16100 View Datasheet(PDF) - Diode Semiconductor Korea
Part Name
Description
Manufacturer
MBR16100 Datasheet PDF : 2 Pages
| |||
Diode Semiconductor Korea
MBR1630 - - - MBR16100
FIG.1 -- FORWARD CURRENT DERATING CURVE
20
Resistive or Inductive Load
16
12
8
4
0
0
50
100
150
AMBIENT TEMPERATURE,℃
FIG.3 --TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
10
TJ=125℃
1
Pulse width=300μs
1% Duty Cycle
TJ=25℃
0.1
0.01
0
MBR1630-MBR1645
MBR1650-MBR1660
MBR1690-MBR16100
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.5--TYPICAL JUNCTION CAPACITANCE
4,000
1,000
100
0.1
MBR1635-MBR1645
MBR1650-MBR16100
1
TJ=25℃
f=1.0MHz
Vsig=50mVp-p
10
100
REVERSE VOLTAGE,VOLTS
FIG.2 --MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT
150
125
100
75
50
25
0
1
TJ=TJ max.
8.3ms SINGLE HALF SINE-WAVE
10
100
NUMBER OF CYCLES AT 60Hz
FIG.4--TYPICAL REVERSE CHARACTERISTICS
50
10
MBR1630-MBR1645
MBR1650-MBR16100
TJ=125℃
1
TJ=75℃
0.1
0.01
0.001
0
TJ=25℃
20 40 60
80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.6--TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1
1
10
100
PULSE DURATION,Sec
www.diode.kr
Share Link: 