W29EE512 View Datasheet(PDF) - Winbond

Part Name

Description

Manufacturer

W29EE512

64K x 8 CMOS FLASH MEMORY

Winbond 

W29EE512

64K × 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION

The W29EE512 is a 512K bit, 5-volt only CMOS flash memory organized as 64K × 8 bits. The device

can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not

required. The unique cell architecture of the W29EE512 results in fast program/erase operations with

extremely low current consumption (compared to other comparable 5-volt flash memory products). The

device can also be programmed and erased using standard EPROM programmers.

FEATURES

• Single 5-volt program and erase operations

• Fast page-write operations

− 128 bytes per page

− Page program cycle: 10 mS (max.)

− Effective byte-program cycle time: 39 µS

− Optional software-protected data write

• Fast chip-erase operation: 50 mS

• Read access time: 70/90/120 nS

• Typical page program/erase cycles: 1K/10K

• Ten-year data retention

• Software and hardware data protection

• Low power consumption

− Active current: 50 mA (max.)

− Standby current: 100 µA (max.)

• Automatic program timing with internal VPP

generation

• End of program detection

− Toggle bit

− Data polling

• Latched address and data

• TTL compatible I/O

• JEDEC standard byte-wide pinouts

• Available packages: 32-pin PLCC, TSOP and

VSOP

Publication Release Date: February 18, 2002

-1-

Revision A7

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