BD241 View Datasheet(PDF) - Bourns, Inc

Part Name

Description

Manufacturer

BD241

NPN SILICON POWER TRANSISTORS

Bourns, Inc 

BD241, BD241A, BD241B, BD241C

NPN SILICON POWER TRANSISTORS

TYPICAL CHARACTERISTICS

1000

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

TCS631AH

VCE = 4 V

tp = 300 µs, duty cycle < 2%

TC = 25°C

TC = 80°C

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

BASE CURRENT

TCS631AB

10

100

10

0·01

0·1

1·0

IC - Collector Current - A

Figure 1.

1·0

0·1

IC = 100 mA

IC = 300 mA

IC = 1 A

IC = 3 A

0·01

10

0·1

1·0

10

100

1000

IB - Base Current - mA

Figure 2.

BASE-EMITTER VOLTAGE

vs

COLLECTOR CURRENT

TCS631AC

1·0

VCE = 4 V

TC = 25°C

0·9

0·8

0·7

0·6

0·5

0·01

0·1

1·0

10

IC - Collector Current - A

Figure 3.

PRODUCT INFORMATION

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

3

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