2SD5071 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SD5071 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD5071
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=2.5 A;IB=0.8A
VBEsat Base-emitter saturation voltage
IC=2.5 A;IB=0.8A
ICBO
Collector cut-off current
VCB=800V; IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE
DC current gain
IC=0.5A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V
VF
Diode forward voltage
tf
Fall time
IF=3.5A
IC=3A;RL=66.7Ω;VCC=200V
IB1=0.8A;IB2=-1.6A
MIN TYP. MAX UNIT
8.0
V
1.5
V
10
μA
40
200 mA
8
3
MHz
2.0
V
0.4
μs
2
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